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供應(yīng)M45PE16-VMW6G 閃存,或非,16Mbit,2Mx8位,75MHz,SPI,WSOIC,8引腳

發(fā)布時(shí)間:2016/7/10

供應(yīng)M45PE16-VMW6G 閃存,或非,16Mbit,2Mx8位,75MHz,SPI,WSOIC,8引腳

產(chǎn)品概述


The M45PE16-VMW6G is a 16Mb micron serial NOR Flash Memory Device accessed by a high-speed, SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time using the page write or page program command. The page write command consists of an integrated page erase cycle followed by a page program cycle. The memory is organized as 32 sectors, each containing 256 pages. Each page is 256 bytes wide. The entire memory can be viewed as consisting of 8192 pages or 2097152-bytes. The memory can be erased one page at a time using the page erase command or one sector at a time using the sector erase command.
  • Hardware writes protection of the bottom memory area 64KB
  • Electronic signature - JEDEC-standard, 2-byte signature (4015h)
  • Deep power-down mode - 1μA (typical)
  • >100000 Write cycles per sector
  • >20 Years of data retention
  • 產(chǎn)品信息

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